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Si4398DY
Vishay Siliconix
N-Channel Reduced Q g , Fast Switching MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
20
R DS(on) ( Ω )
0.0028 at V GS = 10 V
0.0040 at V GS = 4.5 V
I D (A)
25
22
? Halogen-free According to IEC 61249-2-21
Definition
? Extremely Low Q gd for Switching Losses
? Ultra-Low On-Resistance
? 100 % R g and UIS Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Synchronous Rectifier in Low Power DC/DC Converters
? POL
SO- 8
? OR-ing
D
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
Top V ie w
Orderin g Information: Si439 8 DY-T1-E3 (Lead (P b )-free)
Si439 8 DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N-Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
20
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current (10 μs Pulse Width)
Continuous Source Current (Diode Conduction) a
Avalanche Current
Single Pulse Avalanche Energy
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I S
I AS
E AS
25
20
2.9
70
40
80
19
13
1.3
A
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.5
2.2
- 55 to 150
1.6
1.0
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
29
67
13
35
80
16
°C/W
Notes:
a. Surface mounted on 1” x 1” FR4 board.
Document Number: 73018
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
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